Phosphorene Junctions as a Platform for Spin-Selective Quantum Dots in Next-Generation Devices

TL;DR

This study explores how vacancies in phosphorene junctions influence spin-resolved electronic properties of quantum dots, revealing tunable, spin-selective features with potential for quantum and spintronic applications.

Contribution

It demonstrates the emergence of topological quasi-flat bands in phosphorene nanoribbons with vacancies and their impact on spin-selective quantum dot properties.

Findings

Vacancies induce topological quasi-flat bands within the band gap.

Quantum dot properties can be tuned by electric fields and topological structure.

Quantum dots exhibit spin-selective behavior under ferromagnetic exchange fields.

Abstract

The impact of vacancies on spin-resolved electronic properties of quantum dots (QDs) in phosphorene-based junctions, are investigated numerically. Regardless of the crystal orientation, a phosphorene nanoribbon (PNR) containing a monovacancy is found to exhibit a topological quasi-flat band that emerges within the band gap. The electronic properties of QDs, including spatial confinement and energy level distribution, can be strongly tuned by controlling the topological structure of the QDs and by applying electric fields. Additionally, these QDs exhibit remarkable spin-selective properties under a ferromagnetic exchange field, enabling the manipulation of QD features. This opens up the potential for novel applications such as quantum computing, magnetic sensing, spin-based light emission.