Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions

TL;DR

This study calculates the electron g-factor in strained Ge within GeSi/Ge quantum wells, showing its dependence on growth directions and Ge content, which is crucial for spin qubit applications in telecom bands.

Contribution

It provides a detailed analysis of how the electron g-factor varies with growth orientation and substrate composition using an 8-band model, offering insights for quantum device design.

Findings

Electron g-factor decreases with lower Ge content.

Values range from approximately -3.0 to -1.4.

Dependence on growth directions is characterized.

Abstract

For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a diamond structure has attracted significant attention because of the potential for a high-performance spin qubit and optical transitions ranging in telecom bands. We calculated the electron g-factor for strained Ge, analyzing its dependence on both the growth directions ([100], [110], and [111]) and the Ge content of the SiGe substrate using an 8-band model. Our results indicate that the absolute values of the electron g-factor decrease with decreasing Ge content, ranging from approximately -3.0 to -1.4 for all growth directions.