The impact of morphological structure and flexo-chemical strains on the electric transport mechanisms in the molybdenum-disulfide-oxide nanoflakes
Oleksandr S. Pylypchuk, Victor V. Vainberg, Vladimir N. Poroshin, Anastasyia V. Terebilenko, Andrii S. Nikolenko, Vadym I. Popenko, Anatolyi S. Tolochko, Maryna V. Olenchuk, Oleksii Bezkrovnyi, Galina I. Dovbeshko, Tomash Sabov, Boris M. Romanyuk, Sergey V. Kolotilov

TL;DR
This study investigates how the chemical composition and structural features of MoSxOy nanoflakes influence their electrical transport properties, revealing resistive switching and potential applications in memristors and supercapacitors.
Contribution
It introduces a comprehensive analysis combining experimental and theoretical approaches to understand the impact of morphology and chemical strains on electrical conduction in MoSxOy nanoflakes.
Findings
Observation of hysteresis-like I-V behavior in MoSxOy nanoflakes.
Detection of negative differential conductivity in samples with high Mo content.
Theoretical modeling explaining resistive switching via the Landau-Cahn-Hilliard approach.
Abstract
Electric conduction mechanisms are studied in the pressed nanoflake powder of the molybdenum-disulfide-oxide (MoSxOy) depending on their content and structure. The MoSxOy nanoflakes were prepared by reaction of (NH4)6Mo7O24 with thiourea in aqueous solution followed by aerial oxidation. The sintered nanoflakes are 10-20 nm thick and self-assembled in the "nanoflower"-shape aggregates forming powder particles. The chemical composition and structure of the powders were studied by XPS, EDS and Raman spectroscopy, which show that the powders have different chemical composition and structure depending on the preparation conditions. These studies revealed the existence of different forms of MoS2 and its oxides in the powders. These features are impactful on electric transport properties. The current vs voltage (I-V) dependences of the pressed MoSxOy nanoflakes reveal hysteresis-like behavior;…
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Taxonomy
TopicsTransition Metal Oxide Nanomaterials · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces
