In-situ Self-optimization of Quantum Dot Emission for Lasers by Machine-Learning Assisted Epitaxy
Chao Shen, Wenkang Zhan, Shujie Pan, Hongyue Hao, Ning Zhuo, Kaiyao, Xin, Hui Cong, Chi Xu, Bo Xu, Tien Khee Ng, Siming Chen, Chunlai Xue, Fengqi, Liu, Zhanguo Wang, and Chao Zhao

TL;DR
This paper presents a machine learning-assisted in-situ method to optimize quantum dot laser emission during growth, significantly improving performance and enabling real-time feedback control for efficient laser fabrication.
Contribution
It introduces a novel integration of RHEED with a lightweight ResNet-GLAM model for real-time surface reconstruction analysis to optimize quantum dot emission during epitaxial growth.
Findings
3.2-fold increase in PL intensity
Reduced FWHM from 36.69 meV to 28.17 meV
Achieved room-temperature CW operation at 1240 nm
Abstract
Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate in-situ reflection high-energy electron diffraction (RHEED) with machine learning (ML) to correlate the surface reconstruction with the photoluminescence (PL) of InAs/GaAs quantum dots (QDs), which serve as the active region of lasers. A lightweight ResNet-GLAM model is employed for the real-time processing of RHEED data as input, enabling effective identification of optical performance. This approach guides the dynamic optimization of growth parameters, allowing real-time feedback control to adjust the QDs emission for lasers. We successfully optimized InAs QDs on GaAs substrates, with a 3.2-fold increase in PL intensity and a reduction in…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices
