High-Throughput Information Storage in An Intelligent Response Phosphor

TL;DR

This paper introduces a novel phosphor material with enhanced storage capacity and thermo-stimulated luminescence, enabling high-throughput five-dimensional optical data recording for advanced storage applications.

Contribution

It reports the design of a new NaGdGeO4:Pb2+,Tb3+ phosphor doped with Sm3+ that surpasses traditional materials in capacity and luminescence, and demonstrates a new high-dimensional optical storage method.

Findings

Phosphor exhibits three times greater TSL than PL.

Achieves high-throughput five-dimensional optical data recording.

Provides a universal approach for constructing TSL materials.

Abstract

Persistent phosphor has emerged as a promising candidate for information storage due to the rapid accessibility and low-energy requirements. However, the low storage capacity has limited its practical application. Herein, we skillfully designed and developed NaGdGeO4:Pb2+,Tb3+ stimulated phosphor by trace doped Sm3+. As expected, this phosphor demonstrates the larger carrier capacity than traditional commercial SrAl2O4:Eu2+,Dy3+ phosphors and super-strong thermo-stimulated luminescence (TSL) that is three times greater than its photoluminescence (PL) intensity (PL efficiency: 17.3%). A mechanism of the enhanced and controllable TSL is proposed based on electron-hole defect pair structure. We further present a high-throughput optical data recording in five dimensions in a single fluorescent film recording layer. The findings described here provides not only a universal approach for construction TSL materials, but also a new paradigm for future generation optical storage technology.