R-Ising: Effective resistance in random magnetic nanowires networks

TL;DR

This paper introduces a theoretical model for the effective resistance of random magnetic nanowire networks, highlighting the combined influence of magnetic interactions and electronic tunneling on their resistive behavior.

Contribution

It develops a novel framework combining graph theory and mean-field approaches to analyze magnetic and electrical properties of nanowire networks.

Findings

Effective resistance depends on magnetic interactions and tunneling barriers.

The model aids in designing amorphous resistive devices.

Magnetic and electrical properties are crucial for device optimization.

Abstract

Random assemblies of magnetic nanowires represent a unique class of materials with promising applications in spintronics and information storage. These assemblies exhibit complex behavior due to the combination of magnetic dipolar interactions between the nanowires and electronic transport properties governed by tunneling barriers at magnetic tunnel junctions (MTJs). The intricate interplay of these phenomena makes the study of magnetic nanowire networks a rich area of research. In this study, we develop a theoretical framework to analyze the resistive behavior of random magnetic nanowire networks. By employing a combination of graph theoretical approaches and mean-field theory, we derive an effective resistance model that encapsulates the contributions of magnetic interactions between the nanowires. Our findings show the importance of considering both the magnetic and electrical properties of nanowire networks in the design and optimization of amorphous resistive devices.