Single-domain imaging in topological insulator Bi2Te3 thin films

TL;DR

This study demonstrates the growth of single-domain Bi2Te3 thin films, contrasting with Bi2Se3 which exhibits twin boundaries, highlighting the role of van der Waals interactions over strain in domain formation.

Contribution

The paper reports the successful synthesis of single-domain Bi2Te3 thin films and investigates the differing domain structures between Bi2Se3 and Bi2Te3 on Al2O3 substrates.

Findings

Bi2Te3 exhibits single-domain growth over large areas.

Bi2Se3 shows 60° twin boundaries despite lattice matching.

Twin boundary formation is linked to van der Waals interactions, not strain.

Abstract

Single crystalline materials, different from polycrystalline and twinning structures, are desired for investigating the intrinsic physical properties, as grain and twin boundaries often work as a source of artifacts. Bismuth chalcogenides, which are van der Waals materials notable as topological insulators, have attracted significant interest due to their rich physical properties. However, the formation of 60{\deg} twin domains is common in these materials. Here, we demonstrate single-domain bismuth chalcogenides. Using atomic force microscopy, we investigated the morphology of Bi2Se3 and Bi2Te3 grown on Al2O3. Despite lattice constants of Bi2Se3 and Al2O3 substrates being well matched with hybrid symmetry epitaxy, Bi2Se3 exhibited 60{\deg} twin boundaries across the surface. Interestingly, Bi2Te3 showed a single-domain feature across the 10 mm by 10 mm sample even with lattice mismatch. While further in-depth studies are required to understand this difference in the morphology between Bi2Se3/Al2O3 and Bi2Te3/Al2O3, we suggest that the formation of twin boundaries in bismuth chalcogenides is related to the interaction between quintuple layers across the van der Waals gap rather than strain or defects.