Phase diagrams and edge-state transitions in graphene with spin-orbit coupling and magnetic and pseudomagnetic fields

TL;DR

This paper theoretically explores the phase diagrams and edge-state transitions in graphene influenced by magnetic, pseudomagnetic fields, and spin-orbit coupling, revealing how these effects interplay and enabling novel spintronic device designs.

Contribution

It provides a comprehensive analysis of phase diagrams and edge-state evolution in graphene with coexisting magnetic, pseudomagnetic fields, and SOC, introducing potential spintronic applications.

Findings

Real magnetic and pseudomagnetic fields compete above the SOC gap.

QSH effect remains stable within the SOC gap despite external fields.

Edge state transitions enable design of spin-FET and multi-way spintronics switch.

Abstract

The quantum Hall (QH) effect, the quantum spin Hall (QSH) effect and the quantum valley Hall (QVH) effect are three peculiar topological insulating phases in graphene. They are characterized by three different types of edge states. These three effects are caused by the external magnetic field, the intrinsic spin-orbit coupling (SOC) and the strain-induced pseudomagnetic field, respectively. Here we theoretically study phase diagrams when these effects coexist and analyze how the edge states evolve between the three. We find the real magnetic field and the pseudomagnetic field will compete above the SOC energy gap while the QSH effect is almost unaffected within the SOC energy gap. The edge states transition from the QH effect or the QVH effect to the QSH effect directly relies on the arrangement of the zeroth Landau levels. Using edge states transitions, we raise a device similar to a spin field effect transistor (spin-FET) and also design a spintronics multiple-way switch.