Using Electrical Impedance Spectroscopy to Separately Quantify the Effect of Strain on Nanosheet and Junction Resistance in Printed Nanosheet Networks

TL;DR

This study introduces AC impedance spectroscopy to separately measure how strain affects nanosheet and junction resistance in printed MoS2 networks, revealing that junction resistance increases with strain while nanosheet resistance remains unchanged.

Contribution

The paper presents a novel AC impedance spectroscopy method to distinguish strain effects on nanosheet and junction resistances in printed nanomaterial networks.

Findings

Junction resistance increases linearly with strain.

Nanosheet resistance remains constant under strain.

The method estimates individual contributions to overall gauge factor.

Abstract

Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding of the effect of strain on the electrical properties of nano-networks. Here we introduce novel AC electrical techniques to fully characterise the effect of strain on the resistance of high mobility printed networks, fabricated from of electrochemically exfoliated MoS2 nanosheets. These devices were initially characterised using DC piezoresistance measurements and showed good cyclability and a linear strain response, consistent with a low gauge factor of G~3. However, AC impedance spectroscopy measurements, performed as a function of strain, allowed the measurement of the effects of strain on both the nanosheets and the inter-nanosheet junctions separately. The junction resistance was found to increase linearly with strain, while the nanosheet resistance remained constant. This response is consistent with strain-induced sliding of the highly-aligned nanosheets past one another, without any strain being transferred to the sheets themselves. Our approach allows us to individually estimate the contributions of dimensional factors (G~1.4) and intrinsic factors (G~1.9) to the total gauge factor. This novel technique may provide insight into other piezoresistive systems.