Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200{\deg}C

TL;DR

This paper investigates the time-dependent dielectric breakdown in 4H-SiC power MOSFETs under various gate-bias and gate-current stresses at 200°C, providing insights into device reliability under different stress conditions.

Contribution

It introduces a study of TDDB in 4H-SiC MOSFETs considering both positive and negative gate-bias and current stresses at elevated temperature.

Findings

Different stress conditions affect dielectric lifetime.

Positive and negative biases have distinct breakdown behaviors.

Temperature influences the dielectric breakdown process.

Abstract

The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).