Tunneling current-controlled spin states in few-layer van der Waals magnets

TL;DR

This paper demonstrates that tunneling currents can deterministically and stochastically control spin states in few-layer CrI3, advancing spintronics and enabling energy-efficient probabilistic computing.

Contribution

It introduces a novel method of using tunneling current to control spin states in 2D magnets, revealing new mechanisms and stochastic switching behaviors.

Findings

Tunneling current can switch spin states in CrI3 depending on polarity and amplitude.

Demonstrated stochastic switching between multiple spin states in CrI3 devices.

Proposed a mechanism involving nonequilibrium spin accumulation in graphene electrodes.

Abstract

Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI3. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI3, depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing.