Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices

TL;DR

This study demonstrates the use of resistively detected electron spin resonance to measure the g-factor in few-layer MoS2 devices, revealing a consistent g-factor of approximately 1.92 independent of charge density, advancing understanding of spin properties in 2D materials.

Contribution

First application of RD-ESR to naturally n-doped MoS2 with ohmic contacts, providing new insights into the g-factor and spin behavior in few-layer MoS2 devices.

Findings

g-factor of MoS2 is approximately 1.92

g-factor is independent of charge carrier density

RD-ESR is feasible in MoS2 with ohmic contacts

Abstract

MoS2 has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS2 depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to and the determine the g-factor in micron-scale devices However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS2. Here, we exploit naturally n-doped few-layer MoS2 devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS2 devices. Using RD-ESR, we determine the g-factor of few-layer MoS2 to be ~1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.