Semiconductive and Ferromagnetic Lanthanide MXenes Derived from Carbon Intercalated Two-dimensional Halides

TL;DR

This paper introduces a novel bottom-up synthesis method for lanthanide MXenes derived from 2D halides, resulting in semiconductive and ferromagnetic materials with tunable properties suitable for spintronics.

Contribution

It presents a general bottom-up approach to synthesize lanthanide MXenes with unique electronic and magnetic properties, overcoming previous challenges in their fabrication.

Findings

Tunable band gaps from 0.32 eV to 1.22 eV covering typical semiconductors.

Intrinsic ferromagnetism with Curie temperatures between 36 K and 60 K.

Lanthanide MXenes exhibit highly localized 4f electrons contributing to magnetic behavior.

Abstract

Two-dimensional (2D) magnetic semiconductors are a key focus in developing next-generation information storage technologies. MXenes, as emerging 2D early transition metal carbides and nitrides, offer versatile compositions and tunable chemical structures. Incorporating lanthanide metals, with their unique role of 4f-electrons in engineering physical properties, into MXenes holds potential for advancing technological applications. However, the scarcity of lanthanide-containing ternary MAX phase precursors and the propensity of lanthanides to oxidize pose significant challenges to obtain lanthanide MXenes (Ln2CT2) via the top-down etching method. Here, we propose a general bottom-up methodology for lanthanide MXenes, that derive from carbon intercalated van der Waals building blocks of 2D halides. Compared to conventional MXenes conductors, the synthesized Ln2CT2 exhibit tunable band gaps spanning 0.32 eV to 1.22 eV that cover typical semiconductors such as Si (1.12 eV) and Ge (0.67 eV). Additionally, the presence of unpaired f-electrons endows Ln2CT2 with intrinsic ferromagnetism, with Curie temperatures ranging between 36 K and 60 K. Theoretical calculations reveal that, in contrast to traditional MXenes, the number of d-electrons states around the Fermi level are largely diminishes in bare Ln2C MXenes, and the halogen terminals can further exhaust these electrons to open band gaps. Meanwhile, the Ln-4f electrons in Ln2CT2 are highly localized and stay away from the Fermi level, contributing to the spin splitting for the observed ferromagnetic behavior. Lanthanide MXenes hold immense promise for revolutionizing future applications in spintronic devices.