Magnetoresistance oscillations in vertical junctions of 2D antiferromagnetic semiconductor CrPS$_4$

TL;DR

This study reports the observation of magnetoresistance oscillations in insulating 2D antiferromagnetic CrPS$_4$ junctions, revealing quantum behavior linked to spin states and in-gap electronic states, with implications for van der Waals magnetic materials.

Contribution

First demonstration of MR oscillations in an insulating 2D antiferromagnetic semiconductor, highlighting the role of spin-canted states and defect-related electronic states in transport phenomena.

Findings

MR oscillations depend on magnetic field direction and temperature

Spin-canted states influence the MR oscillations

In-gap electronic states are crucial for the observed phenomena

Abstract

Magnetoresistance (MR) oscillations serve as a hallmark of intrinsic quantum behavior, traditionally observed only in conducting systems. Here we report the discovery of MR oscillations in an insulating system, the vertical junctions of CrPS$_4$ which is a two dimensional (2D) A-type antiferromagnetic semiconductor. Systematic investigations of MR peaks under varying conditions, including electrode materials, magnetic field direction, temperature, voltage bias and layer number, elucidate a correlation between MR oscillations and spin-canted states in CrPS$_4$. Experimental data and analysis point out the important role of the in-gap electronic states in generating MR oscillations, and we proposed that spin selected interlayer hopping of localized defect states may be responsible for it. Our findings not only illuminate the unusual electronic transport in CrPS$_4$ but also underscore the potential of van der Waals magnets for exploring interesting phenomena.