Towards the Scalable Fabrication of thin-film Superconducting Parametric Amplifiers

TL;DR

This paper introduces a post-lithography correction method that enhances fabrication yield of superconducting parametric amplifiers, enabling reliable wafer-scale production of high-performance KTWPAs for quantum applications.

Contribution

A novel post-lithography correction technique that significantly improves fabrication yield of NbTiN thin-film KTWPWAs, facilitating scalable manufacturing.

Findings

Achieved >10 dB gain between 2-4 GHz in fabricated KTWPAs.

Implemented automated error correction to eliminate shorts.

Demonstrated reliable wafer-scale production of superconducting amplifiers.

Abstract

Kinetic inductance travelling-wave parametric amplifiers (KTWPAs) are emerging as core components in many applications where wideband cryogenic rf amplification at or near the quantum limit of added noise is critical. These thin film superconducting devices are unique in their ability to simultaneously provide large dynamic range and quantum-limited amplification of single photon to 100,000s of photon signals. Despite the promising performance of co-planar NbTiN thin-film KTWPAs, the original promise of a "simple" single-layer metal fabrication has encountered roadblocks and their broader adoption has been hindered by low fabrication yield. In this work, we present a post-lithography correction technique that eliminates short circuits, significantly improving yield and enabling reliable wafer-scale production. Using automated image acquisition, error analysis, and correction, we successfully fabricated operational KTWPAs on high-resistivity silicon, achieving > 10 dB between 2 - 4 GHz. This approach paves the way for the scaling up manufacturing of KTWPAs, positioning them for widespread deployment in quantum technologies.