Telecom-wavelength Single-photon Emitters in Multi-layer InSe

TL;DR

This paper reports the creation of telecom-wavelength single-photon emitters using multilayer InSe, a 2D material, demonstrating their potential for quantum communication applications through experimental and theoretical analyses.

Contribution

It introduces a novel method to produce telecom-range SPEs in multilayer InSe by coupling with nanopillar arrays, with detailed insights into their electronic and defect structures.

Findings

Successful creation of InSe-based SPEs emitting at 1000-1550 nm

Photon antibunching confirmed at 10 K, proving single-photon emission

Emission wavelength depends on the number of layers

Abstract

The development of robust and efficient single photon emitters (SPEs) at telecom wavelengths is critical for advancements in quantum information science. Two-dimensional (2D) materials have recently emerged as promising sources for SPEs, owing to their high photon extraction efficiency, facile coupling to external fields, and seamless integration into photonic circuits. In this study, we demonstrate the creation of SPEs emitting in the 1000 to 1550 nm near-infrared range by coupling 2D indium selenide (InSe) with strain-inducing nanopillar arrays. The emission wavelength exhibits a strong dependence on the number of layers. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching, confirming the single-photon nature of the emissions. Density-functional-theory calculations and scanning-tunneling-microscopy analyses provide insights into the electronic structures and defect states, elucidating the origins of the SPEs. Our findings highlight the potential of multilayer 2D metal monochalcogenides for creating SPEs across a broad spectral range, paving the way for their integration into quantum communication technologies.