Aluminum Scandium Nitride as a Functional Material at 1000{\deg}C
Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao, David J. Spry,, Garrett Baucom, Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer, Philip G., Neudeck, Honggyu Kim, Philip X.-L. Feng, Mark Sheplak, and Roozbeh Tabrizian

TL;DR
This study demonstrates that aluminum scandium nitride (AlScN) maintains and even enhances its ferroelectric, piezoelectric, and dielectric properties at temperatures up to 1000°C, making it suitable for extreme high-temperature applications.
Contribution
It provides comprehensive experimental evidence of AlScN's thermal stability and functional enhancement at 1000°C, a significant advancement over previous high-temperature ferroelectric materials.
Findings
AlScN retains ferroelectric and dielectric properties up to 1000°C.
Piezoelectric coefficient increases nearly tenfold at high temperatures.
Electromechanical coupling coefficient increases over 500% at elevated temperatures.
Abstract
Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N thin films in extreme thermal environments, demonstrating functional stability up to 1000{\deg}C, making it suitable for use in aerospace, hypersonics, deep-well, and nuclear reactor systems. Tantalum silicide (TaSi2)/Al0.7Sc0.3N/TaSi2 capacitors were fabricated and characterized across a wide temperature range, revealing robust ferroelectric and dielectric properties, along with significant enhancement in piezoelectric performance. At 1000{\deg}C, the ferroelectric hysteresis loops showed a substantial reduction in coercive field from 4.3 MV/cm to 1.2 MV/cm, while the longitudinal piezoelectric coefficient increased nearly tenfold, reaching 75.1 pm/V…
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Taxonomy
TopicsBoron and Carbon Nanomaterials Research · Inorganic Chemistry and Materials · Superconductivity in MgB2 and Alloys
