On the Influence of Parallax Effects in Thick Silicon Sensors in Coherent Diffraction Imaging
Markus Kuster (1), Robert Hartmann (2), Steffen Hauf (1), Peter Holl, (2), Tonn R\"uter (1, 3), Lothar Str\"uder (2) ((1) European XFEL GmbH,, Schenefeld, Germany (2) PNSensor GmbH, M\"unchen, Germany (3) on leave)

TL;DR
This paper investigates how parallax effects in thick silicon sensors impact the resolution and image quality in coherent diffraction imaging using XFELs, focusing on detector parameters and signal-to-noise ratio.
Contribution
It provides preliminary analysis of how the point spread function affects SNR, contrast, and resolution in CXDI with thick silicon sensors.
Findings
Parallax effects influence SNR and contrast in CXDI.
Pixel size impacts the achievable sample resolution.
Preliminary results highlight the importance of detector design in high-resolution imaging.
Abstract
Structure determination is a key application of XFELs and 4th generation synchrotron sources, particularly using the coherent and pulsed X-ray radiation from X-ray free-electron lasers (XFEL). Scientific interest focuses on understanding the physical, biological, and chemical properties of samples at the nanometer scale. The X-rays from XFELs enable Coherent X-ray Diffraction Imaging (CXDI), where coherent X-rays irradiate a sample, and a far-field diffraction pattern is captured by an imaging detector. By the nature of the underlying physics, the resolution, at which the sample can be probed with the CXDI technique, is limited by the wavelength of the X-ray radiation and the exposure time if a detector can record the diffraction pattern to very large scattering angles. The resolution that can be achieved under real experimental conditions, depends strongly on additional parameters. The…
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Taxonomy
TopicsDigital Holography and Microscopy · Image Processing Techniques and Applications · Optical measurement and interference techniques
