HfO2-x Neuromorphic Memristor Based on Tantalum and Molybdenum Electrodes

TL;DR

This paper reports the development of a Ta/HfO2-x/Mo memristor with neuromorphic capabilities, demonstrating stable resistive switching and synaptic behaviors suitable for neuromorphic computing applications.

Contribution

It introduces a novel Ta/HfO2-x/Mo memristor with detailed fabrication, characterization, and demonstration of neuromorphic functionalities, advancing resistive switching device research.

Findings

Stable resistive switching with clear high- and low-resistance states

Demonstration of long-term potentiation and depression

Confirmation of neuromorphic behavior through paired-pulse facilitation

Abstract

In this research, we report the fabrication and characterization of a Ta/HfO2-x/Mo memristor. The synaptic behavior of a Ta/HfO2-x/Mo memristor has been investigated. HfO2-x (15 nm) was grown using the pulsed laser deposition (PLD) method. Electrodes were fabricated using a sputtering system and photolithography method. The metal oxide stoichiometry was ascertained via X-ray photoelectron spectroscopy (XPS). A pinched hysteresis loop is demonstrated through I-V measurements, confirming SET and RESET states. I-V measurement is supported by conduction mechanism analysis. A clear separation between high- and low-resistance states is shown during repeated reads. The neuromorphic characteristics of the device are confirmed through long-term potentiation/depression and paired-pulse facilitation. These results demonstrate that Ta/HfO2-x/Mo is a promising configuration for resistive switching device research and neuromorphic applications.