Silicon modulator exceeding 110 GHz using tunable time-frequency equalization
Hengsong Yue, Jianbin Fu, Hengwei Zhang, Bo Xiong, Shilong Pan, and, Tao Chu

TL;DR
This paper presents a silicon modulator surpassing 110 GHz bandwidth using tunable time-frequency equalization, enabling high-speed optical modulation up to 140 Gbaud without digital processing, rivaling lithium niobate modulators.
Contribution
First demonstration of a silicon modulator exceeding 110 GHz bandwidth with tunable equalization, achieving 140 Gbaud without digital signal processing.
Findings
Achieved over 110 GHz bandwidth in silicon modulator.
Enabled 140 Gbaud on-off keying modulation.
Set the stage for 200-300 Gbaud modulation with further design improvements.
Abstract
Silicon modulators have garnered considerable attention owing to their potential applications in high-density integration and high-speed modulation. However, they are increasingly challenged by the limited 3 dB bandwidth as the demand for modulation speed in optical communications continues to rise, impeding their ability to compete with modulators made of thin-film lithium niobate. This bandwidth limitation arises because of the parasitic resistance and capacitance in the PN junction of the silicon modulators. This study demonstrates the first silicon modulator exceeding 110 GHz without any resonant structure using a tunable time-frequency equalization technique. This substantial breakthrough enables on-off keying modulation at a rate of 140 Gbaud without digital signal processing. These accomplishments represent the highest bandwidth and maximum baud rate achieved without digital…
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Taxonomy
TopicsPhotonic and Optical Devices · Semiconductor Lasers and Optical Devices · Advanced Photonic Communication Systems
