Development of hafnium-based transition edge sensor bolometers for cosmic microwave background polarimetry experiments

TL;DR

This paper introduces a hafnium-based TES bolometer with a novel heated sputter deposition process, enabling stable, tunable critical temperatures suitable for large-scale CMB polarimetry experiments, and offers advantages over traditional materials.

Contribution

It presents a new hafnium-based TES fabrication method with a heated sputter process that allows precise Tc tuning and thermal stability, improving fabrication reliability for CMB detectors.

Findings

Achieved tunable Tc between 140 mK and 210 mK.

Demonstrated stable Tc despite high-temperature processing.

Produced TES bolometers compatible with multiple readout systems.

Abstract

Next generation cosmic microwave background (CMB) polarimetry experiments aim to deploy order 500,000 detectors, requiring repeatable and reliable fabrication process with stable and uniform transition edge sensor (TES) bolometer performance. We present a hafnium (Hf)-based TES bolometer for CMB experiments. We employ a novel heated sputter deposition of the Hf films enabling us to finely tune the critical temperature (Tc) between 140 mK - 210 mK. We found elevated deposition temperatures result in films with lower stress, larger crystal sizes, and a smaller relative abundance of the m-plane to c-plane $\alpha$ phase, all contributing to the empirical linear dependence of critical temperature on deposition temperature. Crucially, the heated sputter deposition simultaneously ensures that the critical temperature does not drift despite exposure to heat throughout ongoing fab processes (sometimes reaching 350C) as long as the initial deposition temperature is not exceeded. Tcs lower than 170 mK require deposition temperature greater than 400C, far in excess of typical temperatures the wafer may experience. This ample thermal budget allows us to relax the stringent thermal management that conventional aluminum manganese (AlMn) TES bolometers require, for which temperatures as low as 200C - 250C are used to anneal the AlMn in an effort to adjust the Tc. Hf additionally exhibits an intrinsic steep superconducting transition (we measure $\alpha >$ 200) and a corresponding high loop gain (exceeding $\mathcal{L}>10$ deep in the transition). We precisely design the normal resistance of the TES to range between 10 milli-Ohm and 1 Ohm through an interdigitated geometry, making these TES bolometers compatible with both TDM, FDM, and $\mu$-mux readout systems. We report on bolometer parameters including critical temperature, normal resistance, saturation power, time constant, and loop gain.