Ion-Assisted Nanoscale Material Engineering in Atomic Layers
Hossein Taghinejad, Mohammad Taghinejad, Sajjad Abdollahramezani,, Qitong Li, Eric V. Woods, Mengkun Tian, Ali A. Eftekhar, Yuanqi Lyu, Xiang, Zhang, Pulickel M. Ajayan, Wenshan Cai, Mark L. Brongersma, James G., Analytis, Ali Adibi

TL;DR
This paper introduces an ion-assisted method for precisely engineering the composition and energy landscape of 2D atomic crystals, enabling the creation of complex, nanoscale, multi-compositional materials with customizable optoelectronic properties.
Contribution
The authors develop a novel ion-assisted synthesis technique that allows deterministic control over the composition and structure of 2D materials at the nanoscale, including complex multi-segmented alloys.
Findings
Successfully transformed binary TMDs into ternary alloys with adjustable composition.
Fabricated structures with boundaries as small as 30 nm.
Demonstrated potential for tailored optoelectronic applications.
Abstract
Achieving deterministic control over the properties of low-dimensional materials with nanoscale precision is a long-sought goal. Mastering this capability has a transformative impact on the design of multifunctional electrical and optical devices. Here, we present an ion-assisted synthetic technique that enables precise control over the material composition and energy landscape of two-dimensional (2D) atomic crystals. Our method transforms binary transition metal dichalcogenides (TMDs), like MoSe, into ternary MoSSe alloys with systematically adjustable compositions, . By piecewise assembly of the lateral, compositionally modulated MoSSe segments within 2D atomic layers, we present a synthetic pathway towards the realization of multi-compositional designer materials. Our technique enables the fabrication of…
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Taxonomy
TopicsSemiconductor materials and devices · Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis
