Identifying Highly Deformable van der Waals Layered Chalcogenides with Superior Thermoelectric Performance Using Deformability Factors and Interpretable Machine Learning

TL;DR

This study uses machine learning and deformability factors to efficiently identify highly deformable van der Waals layered chalcogenides with superior thermoelectric performance, discovering promising candidates like NbSe2Br2.

Contribution

Introduces a high-throughput screening method combining deformability factors and machine learning to find flexible thermoelectric materials with high performance.

Findings

NbSe2Br2 achieved ZTmax of 1.35 at 1000K

Discovered materials surpassing organic thermoelectrics in power factor

Validated candidate materials with first principles calculations

Abstract

Van der Waals layered chalcogenide-based flexible thermoelectric devices show great potential for applications in wearable electronics. However, materials that are both highly deformable and exhibit superior thermoelectric performance are extremely limited. There is an urgent need for methods that can efficiently predict both deformability and thermoelectric performance to enable high-throughput screening of these materials. In this study, over 1000 van der Waals layered chalcogenides were high-throughput screened from material databases, the deformability of which were predicted with our previously developed deformability factor. An accurate and efficient model based on machine learning methods were developed to predict the thermoelectric properties. Several candidate materials with both deformability and thermoelectric potential were successfully discovered. Among them, NbSe2Br2 was verified by first principles calculations, achieving ZTmax value of 1.35 at 1000K, which is currently the highest value among flexible inorganic thermoelectric materials. And the power factor value of 8.1 {\mu}Wcm-1K-2 at 300K also surpassed most organic and inorganic flexible thermoelectric materials. Its high deformability mainly attributed to the small slipping energy that allows interlayer slip and the small in-plane modulus that allows deformation before failure. The high ZTmax is mainly contributed by the extremely low thermal conductivity and the high Seebeck coefficient along the out-of-plane direction at high temperature. The high power factor at room temperature is mainly comes from the high conductivity in the in-plane direction. This study is expected to accelerate the development and application of flexible thermoelectric devices based on inorganic semiconductor materials.