Study of Gas Electron Multiplier Detector Using ANSYS and GARFIELD$^{++}$

TL;DR

This paper models a modified Gas Electron Multiplier (GEM) detector geometry using ANSYS and Garfield++ to improve gain, reduce ion backflow, and enhance detector performance.

Contribution

It introduces a new GEM foil geometry designed for higher gain and better durability, validated through simulation tools.

Findings

Enhanced detector gain observed in simulations

Reduced ion backflow in the new design

Improved detector performance metrics

Abstract

Micro-Pattern Gas Detectors (MPGDs) represent a category of gaseous ionization detectors that utilize microelectronics. They feature a remarkably small distance between the high potential difference anode and cathode electrodes and are typically filled with gases. When a high-energy particle interacts with the gas medium, it generates ions and electrons, which are subsequently accelerated in opposite directions due to the applied electric field. Deflected electrons trigger further ionization to create electron-ion pairs through an avalanche process. These particles can be detected with very high precision at the readout. The Gas Electron Multiplier (GEM) is one type of MPGD constructed with a polyimide film sandwiched between two conductors under a high voltage difference. Microscopic holes in the foil facilitate electron avalanche. However, the current geometry of the GEM detector used in various experiments is sub-optimal for the gain and performance. In this study, we have modified the geometry of the GEM detector to enhance the gain, reduce ions backflow, and enhance the performance of the detector. We are proposing a new geometry of the GEM detector foil for higher gain, better performance, and durability. For this study, the geometry has been constructed in ANSYS, and further studies have been performed using Garfield$^{++}$.