Magnetic- and electric-field-induced anomalous Hall currents from optical excitation of Landau transitions in bulk GaAs
Christoph Dresler, Shekhar Priyadarshi, Mark Bieler

TL;DR
This study investigates anomalous Hall currents in bulk GaAs induced by optical excitation of Landau levels under magnetic and electric fields, revealing discrete features and Berry-phase effects at room temperature.
Contribution
It demonstrates room-temperature detection of Landau level transitions and links Berry-phase effects to anomalous Hall currents in GaAs, using ultrafast optical and THz measurements.
Findings
Detection of Landau band transitions at room temperature.
Distinct THz spectral features linked to Berry-phase effects.
Electron and hole dynamics contribute to complex current behavior.
Abstract
We study a certain type of anomalous Hall current in magnetically- and electrically-biased bulk GaAs samples under the formation of Landau levels. The currents are generated by ultrafast optical excitation of spin-polarized carriers and detected by time-resolved measurements of the simultaneously emitted THz radiation. Due to the requirements of simultaneous magnetic and electric driving fields we refer to these currents as BE-AHC. We find that the BE-AHC peak for optical transitions between the band extrema of Landau levels of valance and conduction bands. These discrete features are attributed to the energy dependence of the geometric phases being responsible for anomalous transport effects in a semiconductor bandstructure. Surprisingly, we even detect the discrete Landau band transitions at room temperature, most likely due to the ultrafast local probing realized in our experiment.…
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Taxonomy
TopicsQuantum and electron transport phenomena · Graphene research and applications · Magnetic Field Sensors Techniques
