Combined Raman spectroscopy and electrical transport measurements in ultra-high vacuum down to 3.7 K

TL;DR

This paper presents a novel instrument that combines Raman spectroscopy and electronic transport measurements at ultra-low temperatures down to 3.7 K, enabling in-situ analysis of air-sensitive thin films.

Contribution

The authors designed and built an integrated setup for simultaneous Raman and transport measurements at cryogenic temperatures, facilitating in-situ functionalization and characterization of thin films.

Findings

Successful measurement of superconducting transition in Niobium film

Observation of temperature-dependent Raman shift and narrowing of Silicon F_{2g} line

The system allows easy sample change without warming up the cryostat

Abstract

An instrument for the simultaneous characterization of thin films by Raman spectroscopy and electronic transport down to 3.7 K has been designed and built. This setup allows for the in-situ preparation of air-sensitive samples, their spectroscopic characterization by Raman spectroscopy with different laser lines and five-probe electronic transport measurements using sample plates with prefabricated contacts. The lowest temperatures that can be achieved on the sample are directly proven by measuring the superconducting transition of a Niobium film. The temperature-dependent Raman shift and narrowing of the Silicon F_{2g} Raman line are shown. This experimental system is specially designed for in-situ functionalization, optical spectroscopic and electron transport investigation of thin films. It allows for easy on-the-fly change of samples without the need to warm up the cryomanipulator.