Resolving Polarization Switching Pathways of Sliding Ferroelectricity in Trilayer 3R-MoS2

TL;DR

This study uses optical techniques to elucidate the complex polarization switching pathways in trilayer 3R-MoS2, revealing the role of domain wall dynamics and pinning centers in multilayer sliding ferroelectrics.

Contribution

It introduces a method to resolve stacking degeneracy and identify multiple switching pathways in trilayer 3R-MoS2, advancing understanding of ferroelectric switching mechanisms.

Findings

Multiple polarization switching pathways identified

Sequential release of domain walls governs switching

Control of domain walls and doping enhances performance

Abstract

Exploring the pathways of polarization switching in 2D sliding ferroelectrics with multiple internal interfaces is crucial for understanding the switching mechanism and for enhancing their performance in memory-related applications. However, distinguishing the rich configurations of various stacking from a coexistence of polarization domains has remained challenging. In this investigation, we employ optical techniques to resolve the stacking degeneracy in a trilayer 3R-MoS2 across several polarization switching cycles. Through a comprehensive analysis of the unique excitonic response exhibited by different layers, we unveil multiple polarization switching pathways that are determined by the sequential release of domain walls initially pinned at various interfaces within the trilayer, providing an understanding of the switching mechanism in multilayered sliding ferroelectrics. Our study not only reveals the intricate dynamics of polarization switching, but also underscores the crucial role of controlling domain walls, pinning centers, and doping levels, offering new insights for enhancing the applications of these materials in sensing and computing.