Ultrathin BIC metasurfaces based on ultralow-loss Sb2Se3 phase-change material
Zhaoyang Xie, Chi Li, Krishna Murali, Haoyi Yu, Changxu Liu, Yiqing, Lu, Stefan A. Maier, Madhu Bhaskaran, Haoran Ren

TL;DR
This paper introduces ultrathin, low-loss Sb2Se3 phase-change material-based BIC metasurfaces that enable high-Q resonances and tunable photonic functionalities in the near-infrared, advancing reconfigurable photonic devices.
Contribution
It presents the design and fabrication of ultrathin Sb2Se3 BIC metasurfaces with high Q-factors and broad resonance tuning, demonstrating their application in modulating photoluminescence.
Findings
Achieved high Q-factors up to 130 in NIR
Demonstrated broad resonance tuning with 25 nm thick metasurfaces
Enabled modulation of photoluminescence in nanoparticles
Abstract
Phase-change materials (PCMs) are increasingly recognised as promising platforms for tunable photonic devices due to their ability to modulate optical properties through solid-state phase transitions. Ultrathin and low-loss PCMs are highly valued for their fast and more effective phase transitions and applications in reconfigurable photonic chips, metasurfaces, optical modulators, sensors, photonic memories, and neuromorphic computing. However, conventional PCMs such as GST, GSST, VO2, and In3SbTe2, despite optimisation for tunable meta-optics, suffer from high intrinsic losses in the near-infrared (NIR) region, limiting their potential for high quality factor (Q-factor) resonant metasurfaces. Here we present the design and fabrication of tunable bound states in the continuum (BIC) metasurfaces using the ultralow-loss PCM Sb2Se3. Our BIC metasurfaces, only 25 nm thick, achieve high…
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Taxonomy
TopicsPhase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · 2D Materials and Applications
