Millikelvin Si-MOSFETs for Quantum Electronics

TL;DR

This paper reports the development of silicon MOSFETs optimized for sub-1 K operation, achieving ultra-low subthreshold swing and enabling large-scale cryo-CMOS integration for quantum electronics.

Contribution

The authors manufactured cryo-optimized silicon-on-insulator MOSFETs with unprecedented subthreshold swing at millikelvin temperatures, advancing cryogenic electronics for quantum computing.

Findings

Achieved subthreshold swing of 0.3 mV/dec at 420 mK

Demonstrated potential for large-scale cryo-CMOS integration

Overcame power dissipation barriers at millikelvin temperatures

Abstract

Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at deep cryogenic temperatures, below 1 K, requires switching performance beyond levels facilitated by currently available CMOS technologies. We have manufactured fully depleted silicon-on-insulator MOSFETs tailored for overcoming the power dissipation barrier towards sub-1 K applications. With these cryo-optimized transistors we achieve a major milestone of reaching subthreshold swing of 0.3 mV/dec at 420 mK, thereby enabling very-large-scale integration of cryo-CMOS electronics for ultra-low temperature applications.