VVTEAM: A Compact Behavioral Model for Volatile Memristors

TL;DR

This paper introduces V-VTEAM, a simple and flexible behavioral model for volatile memristors, enabling efficient circuit design and simulation, validated by fitting experimental data with high accuracy.

Contribution

The paper presents a novel compact behavioral model for volatile memristors, inspired by VTEAM, specifically tailored for simulation and design purposes.

Findings

Model fits experimental data with 4.5% error

Enables efficient simulation of volatile memristor circuits

Supports design of neuromorphic and security applications

Abstract

Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and area. Additionally, volatile memristors are useful as selector devices and for hardware security circuits such as physical unclonable functions. To facilitate the design and simulation of circuits, a compact behavioral model is essential. This paper proposes V-VTEAM, a compact, simple, general, and flexible behavioral model for volatile memristors, inspired by the VTEAM nonvolatile memristor model and developed in MATLAB. The validity of the model is demonstrated by fitting it to an ion drift/diffusion-based Ag/SiOx/C/W volatile memristor, achieving a relative root mean error square of 4.5%.