Steering of Sub-GeV positrons by ultra-thin bent Silicon crystal for ultra slow extraction applications

TL;DR

This paper demonstrates high-efficiency deflection of 450 MeV positrons using a bent silicon crystal via planar channeling, enabling potential applications in slow extraction from lepton accelerators.

Contribution

First experimental demonstration of sub-GeV positron steering with bent silicon crystals for beam manipulation in accelerator physics.

Findings

Achieved deflection angles beyond 1 mrad.

High efficiency in positron deflection using planar channeling.

Potential for improved slow extraction techniques in lepton accelerators.

Abstract

For the first time at the Beam Test Facility of the DA{\Phi}NE accelerator complex at the Laboratori Nazionali di Frascati of INFN, 450 MeV positrons have been deflected with high efficiency, using the Planar Channeling process in a bent silicon crystal. The deflection angle obtained is beyond 1 mrad. This interesting result finds several applications for manipulation of this kind of beams, in particular for slow extraction from leptons circular accelerators like DA{\Phi}NE. In this work the experimental apparatus, the measurement procedure and the experimental results are reported.