Strain Effects in SrHfO$_{3}$ Films Grown by Hybrid Molecular Beam Epitaxy
Patrick T. Gemperline, Arashdeep S. Thind, Chunli Tang, George E., Sterbinsky, Boris Kiefer, Wencan Jin, Robert F. Klie, Ryan B. Comes

TL;DR
This study investigates how strain influences the structural phases of SrHfO₃ films grown by hybrid molecular beam epitaxy, revealing a phase transition to an I4/mcm structure under compressive strain, contrary to previous reports.
Contribution
It provides experimental evidence of strain-induced phase changes in SrHfO₃ films, challenging earlier assumptions and combining advanced characterization with DFT models.
Findings
Strain induces octahedral tilt distortions in SrHfO₃.
Compressed SrHfO₃ adopts an I4/mcm phase with specific tilt patterns.
Results contrast with previous reports of phase stability under strain.
Abstract
Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in MOSFETs and FRAM. SrHfO (SHO) is a perovskite oxide with pseudo-cubic lattice parameter of 4.1 that previous DFT calculations suggest can be stabilized in a ferroelectric P4mm phase, similar to STO, when stabilized with sufficient compressive strain. Additionally, it is insulating, possesses a large band gap, and a high dielectric constant, making it an ideal candidate for oxide electronic devices. In this work, SHO films were grown by hybrid molecular beam epitaxy with a tetrakis(ethylmethylamino)hafnium(IV) source on GdScO and TbScO substrates. Equilibrium and strained SHO phases were characterized using X-ray diffraction, X-ray…
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Taxonomy
TopicsSemiconductor materials and devices · Electronic and Structural Properties of Oxides · Ferroelectric and Negative Capacitance Devices
