Memory resistor based in GaAs 2D-bilayers: In and out of equilibrium

TL;DR

This paper explores how GaAs 2D-bilayer systems exhibit memory resistor behavior through resonant tunneling, negative differential resistance, and hysteresis, enabling volatile memory applications.

Contribution

It demonstrates the use of GaAs 2D-bilayers as volatile memory resistors based on resonant tunneling and negative differential resistance phenomena.

Findings

High tunneling conductances occur at aligned Fermi levels.

Detuning causes negative differential resistance.

Hysteresis enables memory resistor functionality.

Abstract

Resonant tunneling between closely spaced two dimensional electron gases is a single particle phenomenon that has sparked interest for decades. High tunneling conductances at equal electron densities are observed whenever the Fermi levels of the two quantum wells align. Detuning the Fermi levels out of the resonant 2D-2D tunneling regime causes a negative differential resistance. The negative differential resistance leads to a hysteresis when operating the device in a current driven mode, allowing a bilayer system to function as a volatile memory resistor.