Structure evolution path of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing

TL;DR

This study investigates the structural evolution of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing, revealing phase transformations and polarization dynamics crucial for optimizing FE memory devices.

Contribution

It provides direct experimental evidence and theoretical insights into the phase transition pathways and domain structure evolution during electric field cycling in HfO2-based ferroelectric materials.

Findings

Transformation of non-FE O-Pbca to FE O-Pca21 phase under electric field

Polar axis aligns with bias direction through ferroelastic transformation

FE polarization degrades after multiple electric cycles

Abstract

Fluorite-type $\mathrm{HfO_2}$-based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-density integration. The polarization characteristics of FE devices are governed by the dynamics of metastable domain structure evolution. Insightful design of FE devices for encoding and storage necessitates a comprehensive understanding of the internal structural evolution. Here, we demonstrate the evolution of domain structures through a transient polar orthorhombic (O)-$Pmn2_1$-like configuration via $in$-$situ$ biasing on $\mathrm{TiN/Hf_{0.5}Zr_{0.5}O_2/TiN}$ capacitors within spherical aberration-corrected transmission electron microscope, combined with theoretical calculations. Furthermore, it is directly evidenced that the non-FE O-$Pbca$ transforms into the FE O-$Pca2_1$ phase under electric field, with the polar axis of the FE-phase aligning towards the bias direction through ferroelastic transformation, thereby enhancing FE polarization. As cycling progresses further, however, the polar axis collapses, leading to FE degradation. These novel insights into the intricate structural evolution path under electrical field cycling facilitate optimization and design strategies for $\mathrm{HfO_2}$-based FE memory devices.