Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon

TL;DR

This paper demonstrates that double-quantum-dot tunneling through individual deep dopants in silicon exhibits Pauli spin blockade at room temperature, enabling potential room-temperature quantum devices and magnetic sensors.

Contribution

It shows that single deep dopants in silicon can act as quantum dots exhibiting PSB at room temperature, a significant advancement over previous temperature limitations.

Findings

PSB observed at room temperature in silicon deep dopants

Magnetoconductance identifies PSB and enables magnetic sensing

Lifting of PSB by magnetic resonance and Rabi oscillations

Abstract

Pauli spin blockade (PSB) is a spin-dependent charge transport process that typically appears in double quantum dot (QD) devices and is employed in fundamental research on single spins in nanostructures to read out semiconductor qubits. The operating temperature of PSB is limited by that of the QDs and remains below 10 K, limiting wide application development. Herein, we confirm that a single deep dopant in the channel of a silicon field effect transistor functions as a room-temperature QD; consequently, transport through two different deep dopants exhibits PSB up to room temperature. The characteristic magnetoconductance provides a means to identify PSB and enables the PSB device to function as a magnetic sensor with a sensitivity below geomagnetic field. Lifting in PSB caused by magnetic resonance (50 K) and Rabi oscillations (10 K) are also observed. Further development of this unique system may lead to room-temperature quantum technologies based on silicon technology.