Theory of optical spin polarization of axial divacancy and nitrogen-vacancy defects in 4H-SiC
Guodong Bian, Gerg\H{o} Thiering, \'Ad\'am Gali

TL;DR
This paper provides a detailed theoretical analysis of the electron-phonon interactions and spin-dependent optical processes in divacancy and nitrogen-vacancy defects in 4H-SiC, crucial for quantum bit applications.
Contribution
It offers the first comprehensive first-principles investigation of the microscopic mechanisms behind optical spin polarization in these defects, including electron-phonon coupling and intersystem crossing.
Findings
Electronic level structures are quantitatively characterized.
Spin-orbit and spin-spin interactions are fully analyzed.
Electron-phonon coupling effects on spin polarization are elucidated.
Abstract
The neutral divacancy and the negatively charged nitrogen-vacancy defects in 4H-silicon carbide (SiC) are two of the most prominent candidates for functioning as room-temperature quantum bits (qubits) with telecommunication-wavelength emission. Nonetheless, the pivotal role of electron-phonon coupling in the spin polarization loop is still unrevealed. In this work, we theoretically investigate the microscopic magneto-optical properties and spin-dependent optical loops utilizing the first-principles calculations. First, we quantitatively demonstrate the electronic level structure, assisted by symmetry analysis. Moreover, the fine interactions, including spin-orbit coupling and spin-spin interaction, are fully characterized to provide versatile qubit functional parameters. Subsequently, we explore the electron-phonon coupling, encompassing dynamics- and pseudo-Jahn--Teller effects in the…
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Taxonomy
TopicsSilicon Carbide Semiconductor Technologies · Thin-Film Transistor Technologies · Copper Interconnects and Reliability
