Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-WSe$_2$ Monolayers
Wang Chen, Mengli Hu, Junyu Zong, Xuedong Xie, Wei Ren, Qinghao Meng, Fan Yu, Qichao Tian, Shaoen Jin, Xiaodong Qiu, Kaili Wang, Can Wang, Junwei Liu, Fang-Sen Li, Li Wang, Yi Zhang

TL;DR
This study investigates the temperature-dependent electronic properties of epitaxial 1T'-WSe$_2$ monolayers, revealing a Coulomb gap that persists up to 200 K and highlighting their potential for quantum spin Hall applications.
Contribution
It provides the first detailed analysis of temperature effects on the Coulomb gap and band structure in epitaxial 1T'-WSe$_2$ monolayers on different substrates.
Findings
Coulomb gap decreases with temperature but persists up to 200 K.
Thermal expansion significantly affects band structure on bilayer graphene.
Substrate influences temperature stability of electronic properties.
Abstract
The transition metal dichalcogenides (TMDCs) with a 1T' structural phase are predicted to be two-dimensional topological insulators at zero temperature. Although the quantized edge conductance of 1T'-WTe has been confirmed to survive up to 100 K, this temperature is still relatively low for industrial applications. Addressing the limited studies on temperature effects in 1T'-TMDCs, our research focuses on the electronic and crystal properties of the epitaxial 1T'-WSe monolayers grown on bilayer graphene (BLG) and SrTiO(100) substrates at various temperatures. For the 1T'-WSe grown on BLG, we observed a significant thermal expansion effect on its band structures with a thermal expansion coefficient of 6010 K. In contrast, the 1T'-WSe grown on SrTiO(100) exhibits minimal changes with varied temperatures due to the enhanced strain exerted…
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Taxonomy
Topics2D Materials and Applications · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials
