A biology-inspired model for the electrical response of solid state memristors
Agustin Bou, Cedric Gonzales, Pablo P. Boix, Antonio Guerrero, Juan, Bisquert

TL;DR
This paper introduces a biologically inspired model for the electrical response of solid state memristors, unifying their set and reset processes through a Hodgkin-Huxley based approach that captures diverse experimental behaviors.
Contribution
The authors develop a novel, unified Hodgkin-Huxley inspired model for memristor dynamics that accurately replicates experimental traits across various materials and configurations.
Findings
Model replicates volatile and nonvolatile memristor behaviors.
Captures effects of scan rate and voltage sequence dependence.
Provides insights into physical mechanisms controlling memristor responses.
Abstract
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes transitions of the conductance, determined by different physical mechanisms such as the formation of conducting filaments in an insulating surrounding. Here we provide a unified description of the set and reset processes, by means of a single voltage activated relaxation time of the memory variable. This approach is based on the Hodgkin-Huxley model that is widely used to describe action potentials dynamics in neurons. We focus on halide perovskite memristors and their intersection with neuroscience-inspired computing. We show that the modelling approach adeptly replicates the experimental traits of both volatile and nonvolatile memristors. Its…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Photoreceptor and optogenetics research · stochastic dynamics and bifurcation
