Artificial moir\'{e} engineering for an ideal BHZ model

TL;DR

This paper proposes a method to engineer moiré patterns in Cd3As2 thin films to realize the BHZ model, enabling the exploration of topological flat bands and quantum anomalous Hall effects.

Contribution

It introduces a novel approach to create moiré BHZ models using superlattice-patterned gates on Cd3As2 films, combining theoretical calculations and mean field analysis.

Findings

Identification of parameter regions for topological flat mini-bands.

Proposal of spin-polarized states as platforms for quantum anomalous Hall effect.

Theoretical demonstration of moiré pattern effects on topological properties.

Abstract

We demonstrate that (001) grown Cd3As2 thin films with a superlattice-patterned gate can potentially realize the moir\'e Bernevig-Hughes-Zhang (BHZ) model. Our calculations identify the parameterization region necessary to achieve topological flat mini-bands with a C4z symmetric and a C6z symmetric potential. Additionally, we show that a spin-polarized state can serve as the minimal platform for hosting the moir\'e induced quantum anomalous Hall effect, supported by Hartree Fock interaction kernel analysis and self-consistent mean field calculations.