Realizing tunable Fermi level in SnTe by defect control

TL;DR

This paper demonstrates a scalable method to tune the Fermi level in tin telluride by controlling tin concentration during synthesis, enabling better access to surface states for advanced electronic applications.

Contribution

It introduces a novel, low-cost approach to modulate the Fermi level in SnTe through defect control during chemical vapor deposition.

Findings

Fermi level can be effectively tuned by adjusting tin concentration.

Tin-rich conditions cause a blue shift in core-level peaks.

Work function measurements confirm suppression of Sn vacancies.

Abstract

The tuning of the Fermi level in tin telluride, a topological crystalline insulator, is essential for accessing its unique surface states and optimizing its electronic properties for applications such as spintronics and quantum computing. In this study, we demonstrate that the Fermi level in tin telluride can be effectively modulated by controlling the tin concentration during chemical vapor deposition synthesis. By introducing tin-rich conditions, we observed a blue shift in the X-ray photoelectron spectroscopy core-level peaks of both tin and tellurium, indicating an upward shift in the Fermi level. This shift is corroborated by a decrease in work function values measured via ultraviolet photoelectron spectroscopy, confirming the suppression of Sn vacancies. Our findings provide a low-cost, scalable method to achieve tunable Fermi levels in tin telluride, offering a significant advancement in the development of materials with tailored electronic properties for next-generation technological applications.