Color Centers in Hexagonal Boron Nitride

TL;DR

This paper reviews the properties, formation techniques, and potential applications of color centers in hexagonal boron nitride, highlighting their significance for quantum technologies and optoelectronics.

Contribution

It provides a comprehensive overview of the atomic, optical, and quantum properties of hBN color centers and discusses methods for their formation and application.

Findings

Color centers in hBN exhibit unique optical and spin properties.

They enable development of room-temperature single-photon sources.

Potential for advanced quantum sensors and UV optoelectronic devices.

Abstract

Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.