Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS

TL;DR

This paper explores the design and simulation of microwave and mm-wave integrated circuits, specifically transimpedance amplifiers and pulse generators, for controlling and reading out spin qubits in quantum computing, demonstrating promising preliminary results.

Contribution

It presents the feasibility and initial simulation results of key integrated circuits for quantum spin qubit control in 22nm FDSOI CMOS technology.

Findings

Transimpedance amplifier achieves 108.5 dB Ohm gain over 18 GHz bandwidth.

Pulse generator produces mm-wave sinusoidal pulses with 20 ps duration.

Preliminary simulation results support the potential for integrated quantum control circuits.

Abstract

This paper investigates the implementation of microwave and mm-wave integrated circuits for control and readout of electron/hole spin qubits, as elementary building blocks for future emerging quantum computing technologies. In particular, it summarizes the most relevant readout and control techniques of electron/hole spin qubits, addresses the feasibility and reports some preliminary simulation results of two blocks: transimpedance amplifier (TIA) and pulse generator (PG). The TIA exhibits a transimpedance gain of 108.5 dB Ohm over a -3dB bandwidth of 18 GHz, with input-referred noise current spectral density of 0.89 pA/root(Hz) at 10 GHz. The PG provides a mm-wave sinusoidal pulse with a minimum duration time of 20 ps.