Controlled Growth of large area bilayer MoS$_2$ films on SiO$_2$ substrates by chemical vapour deposition technique

TL;DR

This paper reports a controlled chemical vapor deposition method to grow large-area, uniform bilayer MoS$_2$ films on SiO$_2$ substrates, confirmed by multiple characterization techniques, with promising electronic device performance.

Contribution

The study introduces a novel flow pattern engineering technique for CVD growth that achieves uniform, large-area bilayer MoS$_2$ films without substrate plasma treatment.

Findings

Large-area bilayer MoS$_2$ films successfully grown by CVD.

Films confirmed as bilayer by Raman, AFM, PL, and HRTEM.

FET devices exhibit high on/off ratio of 10^6.

Abstract

Bilayer (2L) transition metal dichalcogenides (TMD) have the ability to host interlayer excitons, where electron and hole parts are spatially separated that leads to much longer lifetime as compared to direct excitons. This property can be utilized for the development of exciton-based logic devices, which are supposed to be superior in terms of energy efficiency and optical communication compatibility as compared to their electronic counterparts. However, obtaining uniformly thick bilayer epitaxial films with large area coverage is challenging. Here, we have engineered the flow pattern of the precursors over the substrate surface to obtain large area (mm2) covered strictly bilayer MoS$_2$ films on SiO$_2$ by chemical vapour deposition (CVD) technique without any plasma treatment of the substrate prior to the growth. Bilayer nature of these films is confirmed by Raman, low-frequency Raman, atomic force microscopy (AFM) and photoluminescence (PL) studies. The uniformity of the film has been checked by Raman peak separation and PL intensity map. High resolution transmission electron microscopy (HRTEM) reveals that crystalline and twisted bilayer islands coexist within the layer. Back gated field-effect transistor (FET) structures fabricated on the bilayers show on/off ratio of 10^6 and subthreshold swings (SS) of 2.5 V/Decade.