Laser Activation of Single Group-IV Colour Centres in Diamond

TL;DR

This paper presents a precise two-step fabrication method combining ion implantation and laser annealing to create and control single group-IV colour centres in diamond, advancing quantum network technology.

Contribution

It introduces a novel site-controlled ion implantation and laser annealing technique for single defect activation in diamond, enabling scalable quantum device fabrication.

Findings

Successful site-selective creation of single SnV- centres.

Controlled implantation with sub-50 nm resolution.

Insights into defect dynamics during annealing.

Abstract

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV-) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV- centres. The technique opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV- centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.