Etching Properties of PIN-PMN-PT and its Integration in Electro-Optic Phase Modulators

TL;DR

This study examines the etching processes for PIN-PMN-PT crystals and demonstrates their integration into electro-optic phase modulators, achieving promising modulation performance.

Contribution

It introduces a systematic analysis of etching techniques for PIN-PMN-PT and details the fabrication of integrated electro-optic phase modulators using these materials.

Findings

Optimized etching methods for PIN-PMN-PT crystals.

Successful fabrication of PIN-PMN-PT thin films and waveguides.

Electro-optic phase modulators with a $V_\pi L$ of 19.2 V·cm.

Abstract

We investigate the etching characteristics of PIN-PMN-PT crystals, exploring various wet etching solutions, reactive ion etching gases, and ion beam etching. The etch rate and surface roughness are systematically measured for each method. A process flow to obtain PIN-PMN-PT thin films is described and performed to later build a single mode rib waveguide. An integrated electro-optic phase modulator is fabricated by depositing electrodes on the sides of the waveguides. The electro-optic coefficient implied in our phase modulators is the $r_{51}/r_{42}$. The performances are tested achieving a $V_\pi L$ of 19.2 V$\cdot$cm.