Large Anomalous Hall Conductivity Derived from an $f$-Electron Collinear Antiferromagnetic Structure

TL;DR

This paper demonstrates that an $f$-electron antiferromagnetic material, Ce$_2$CuGe$_6$, exhibits a large anomalous Hall conductivity, surpassing $d$-electron AFMs, due to symmetry breaking and combined intrinsic and extrinsic mechanisms.

Contribution

It reveals the large anomalous Hall effect in an $f$-electron AFM, highlighting a new class of materials with significant Hall responses.

Findings

AHC of 550 Ω^{-1}cm^{-1} in Ce$_2$CuGe$_6$

AH response scales with electrical conductivity

Both intrinsic and extrinsic mechanisms contribute to the AH effect

Abstract

Appropriate symmetry breaking generates an anomalous Hall (AH) effect, even in antiferromagnetic (AFM) materials. Itinerant magnets with $d$ electrons are typical examples that show a significant response. By contrast, the process by which a response emerges from $f$-electron AFM structures remains unclear. In this study, we show that an AFM material, Ce$_2$CuGe$_6$, yields a large AH conductivity (AHC) of $550$ $\Omega^{-1}$cm$^{-1}$, which exceeds the values previously reported in $d$-electron AFM materials. Observed features, including the scaling relation against electrical conductivity, suggest that this AH transport is induced cooperatively by both intrinsic and extrinsic mechanisms derived from the AFM structure.