Emergence of Superconductivity at 20 K in Th$_3$P$_4$-type In$_{3-x}$S$_4$ Synthesized by Diamond Anvil Cell with Boron-doped Diamond Electrodes
Ryo Matsumoto, Kazuki Yamane, Terumasa Tadano, Kensei Terashima, Toru, Shinmei, Tetsuo Irifune, Yoshihiko Takano

TL;DR
This study reports the discovery of superconductivity at 20 K in a metastable phase of In$_{3-x}$S$_4$ synthesized under high pressure using a novel diamond anvil cell with boron-doped electrodes, highlighting a new high-$T_c$ sulfide.
Contribution
It demonstrates the synthesis of a metastable In$_{3-x}$S$_4$ phase with high $T_c$ at 20 K under high pressure, using an innovative high-pressure in-situ measurement technique.
Findings
Superconductivity at 20 K observed in In$_{3-x}$S$_4$ under 45 GPa.
Complete structural transformation achieved through high-pressure annealing.
High density of states near Fermi energy supports superconductivity.
Abstract
The exploration of superconductors in metastable phases by manipulating crystal structures through high-pressure techniques has attracted significant interest in materials science to achieve a high critical temperature (). In this study, we report an emergence of novel superconductivity in a metastable phase of ThP-type cubic InS with remarkably high at 20 K under 45 GPa by using an originally designed diamond anvil cell equipped with boron-doped diamond electrodes, which can perform a high-pressure synthesis and an in-situ electrical transport measurement simultaneously. In-situ structural analysis indicates that the InS appears partially above 40 GPa without heating. The high-pressure annealing treatment induces complete transformation to the ThP-type structure, and the defected concentration of x in InS decreases with…
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Taxonomy
TopicsSuperconducting Materials and Applications · Nuclear Materials and Properties · Quantum, superfluid, helium dynamics
