Theory of charge stability diagrams in coupled quantum dot qubits
Nathan L. Foulk, Sankar Das Sarma

TL;DR
This paper develops a detailed numerical model for charge stability diagrams in coupled quantum dot qubits, improving accuracy over classical models and revealing effects of electron interactions and device geometry.
Contribution
It introduces a multi-electron configuration interaction approach combined with an atomic orbital model to accurately predict charge stability diagrams in quantum dots.
Findings
Charge states are predicted more accurately than classical models.
Tunnel couplings are significantly enhanced for multi-electron dots.
Barrier gate strength and dot pitch influence charge stability features.
Abstract
We predict large regions of the charge stability diagram using a multi-band and multi-electron configuration interaction model of a double quantum dot system. We account for many-body interactions within each quantum dot using full configuration interaction and solve for single-particle density operators. This allows charge states to be predicted more accurately than the extensively used classical capacitance model or the single-band Hubbard model. The resulting single-particle mixed states then serve as inputs into an atomic orbital picture that allows for the explicit calculation of the underlying Hubbard model parameters by performing the appropriate integrals. This numerical approach allows for arbitrary choices of electrostatic potential and gate geometry. A common assumption when calculating charge stability diagrams from the Hubbard model is that the charge stability diagrams are…
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices
