Charge transport systems with Fermi-Dirac statistics for memristors

TL;DR

This paper analyzes a complex charge transport model for memristors incorporating Fermi-Dirac and Blakemore statistics, proving the existence and boundedness of solutions in multiple dimensions.

Contribution

It introduces a rigorous mathematical analysis of a drift-diffusion system with realistic quantum statistics for memristor modeling, establishing global existence and boundedness of solutions.

Findings

Proved global existence of weak solutions in up to three dimensions.

Established boundedness of charge densities under realistic conditions.

Developed new estimates for Fermi-Dirac integrals in this context.

Abstract

An instationary drift-diffusion system for the electron, hole, and oxygen vacancy densities, coupled to the Poisson equation for the electric potential, is analyzed in a bounded domain with mixed Dirichlet-Neumann boundary conditions. The electron and hole densities are governed by Fermi-Dirac statistics, while the oxygen vacancy density is governed by Blakemore statistics. The equations model the charge carrier dynamics in memristive devices used in semiconductor technology. The global existence of weak solutions is proved in up to three space dimensions. The proof is based on the free energy inequality, an iteration argument to improve the integrability of the densities, and estimations of the Fermi-Dirac integral. Under a physically realistic elliptic regularity condition, it is proved that the densities are bounded.