>3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on

TL;DR

This paper reports the development of high-voltage NiO/Ga2O3 heterojunction diodes with space-modulated junction termination, achieving over 3 kV breakdown voltage, low turn-on voltage, and excellent current handling capabilities.

Contribution

It introduces a novel 2-step space-modulated junction termination extension that significantly improves breakdown voltage and performance of Ga2O3-based diodes.

Findings

Breakdown voltage exceeds 3 kV

Achieves 100 A-cm-2 at 1.5V forward bias

Unipolar FOM exceeds 2 GW-cm2

Abstract

This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current state-of-the-art Ga2O3 HJDs, we achieve breakdown voltage exceeding 3 kV with a low turn on voltage (VON) of 0.8V, estimated at a forward current density (IF) of 1 A-cm-2. The measured devices exhibit excellent turn-on characteristics achieving 100 A-cm-2 current density at a forward bias of 1.5V along with a low differential specific on-resistance (Ron,sp) of 4.4 m{\Omega}-cm2. The SM-JTE was realized using concentric NiO rings with varying widths and spacing that approximates a gradual reduction in JTE charge. The unipolar figure of merit (FOM) calculated exceeds 2 GW-cm2 and is among the best reported for devices with a sub-1V turn-on. The fabricated devices also displayed minimal change in forward I-V characteristics post reverse bias stress of 3 kV applied during breakdown voltage testing.